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  maximum ratings rating symbol value unit collectorCemitter voltage v ceo 40 vdc collectorCbase voltage v cbo 75 vdc emitterCbase voltage v ebo 6.0 vdc collector current C continuous i c 600 madc thermal characteristics characteristic symbol max unit total package dissipation (note 1) t a = 25 c p d 150 mw thermal resistance, junction to ambient r  ja 833 c/w junction and storage temperature t j , t stg C55 to +150 c q 1 (1) (2) (3) (4) (5) (6) q 2 dual general purpose transistors npn silicon 1 3 2 6 4 5 sot-363 we declare that material of product compliance with rohs requirements. ordering information device shipping MMBT2222ADW1T1 3000/tape & reel 2012-0 willas electronic corp. MMBT2222ADW1T1
electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectorCemitter breakdown voltage (i c = 10 madc, i b = 0) v (br)ceo 40 C vdc collectorCbase breakdown voltage (i c = 10  adc, i e = 0) v (br)cbo 75 C vdc emitterCbase breakdown voltage (i e = 10  adc, i c = 0) v (br)ebo 6.0 C vdc collector cutoff current (v ce = 60 vdc, v eb(off) = 3.0 vdc) i cex C 10 nadc collector cutoff current (v cb = 60 vdc, i e = 0) (v cb = 60 vdc, i e = 0, t a = 125 c) i cbo C C 0.01 10  adc emitter cutoff current (v eb = 3.0 vdc, i c = 0) i ebo C 100 nadc base cutoff current (v ce = 60 vdc, v eb(off) = 3.0 vdc) i bl C 20 nadc on characteristics dc current gain (i c = 0.1 madc, v ce = 10 vdc) (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc, t a = C55 c) (i c = 150 madc, v ce = 10 vdc) (note 2) (i c = 150 madc, v ce = 1.0 vdc) (note 2) (i c = 500 madc, v ce = 10 vdc) (note 2) h fe 35 50 75 35 100 50 40 C C C C 300 C C C collectorC emitter saturation voltage (note 2) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v ce(sat) C C 0.3 1.0 vdc baseC emitter saturation voltage (note 2) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v be(sat) 0.6 C 1.2 2.0 vdc 2. pulse test: pulse width 300  s, duty cycle 2.0%. 2012-0 willas electronic corp. dual general purpose transistors MMBT2222ADW1T1
smallCsignal characteristics currentCgain C bandwidth product (note 3) (i c = 20 madc, v ce = 20 vdc, f = 100 mhz) f t 300 C mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo C 8.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo C 25 pf input impedance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h ie 2.0 0.25 8.0 1.25 k w voltage feedback ratio (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h re C C 8.0 4.0 x 10 C4 smallC signal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h fe 50 75 300 375 C output admittance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) (i c = 10 madc, v ce = 10 vdc, f = 1.0 khz) h oe 5.0 25 35 200  mhos collector base time constant (i e = 20 madc, v cb = 20 vdc, f = 31.8 mhz) rb, c c C 150 ps noise figure (i c = 100  adc, v ce = 10 vdc, r s = 1.0 k w , f = 1.0 khz) nf C 4.0 db switching characteristics delay time (v cc = 30 vdc, v be ( off ) = C0.5 vdc, t d C 10 ns rise time (v cc 30 vdc, v be(off) 0.5 vdc, i c = 150 madc, i b1 = 15 madc) t r C 25 ns storage time (v cc = 30 vdc, i c = 150 madc, t s C 225 ns fall time (v cc 30 vdc, i c 150 madc, i b1 = i b2 = 15 madc) t f C 60 ns 3. f t is defined as the frequency at which |h fe | extrapolates to unity. 2012-0 willas electronic corp. dual general purpose transistors MMBT2222ADW1T1
1000 10 20 30 50 70 100 200 300 500 700 1.0 k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 i c , collector current (ma) figure 1. dc current gain h fe , dc current gain v ce , collector-emitter voltage (volts) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 i b , base current (ma) figure 2. collector saturation region figure 3. turnCon time i c , collector current (ma) 70 100 200 50 t, time (ns) 10 20 70 5.0 100 5.0 7.0 30 50 200 10 30 7.0 20 i c /i b = 10 t j = 25 c t r @ v cc = 30 v t d @ v eb(off) = 2.0 v t d @ v eb(off) = 0 3.0 2.0 300 500 500 t, time (ns) 5.0 7.0 10 20 30 50 70 100 200 300 figure 4. turnCoff time i c , collector current (ma) 10 20 70 100 5.0 7.0 30 50 200 300 500 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s = t s - 1/8 t f t f 2012-0 willas electronic corp. dual general purpose transistors MMBT2222ADW1T1
figure 5. frequency effects f, frequency (khz) 4.0 6.0 8.0 10 2.0 0.1 figure 6. source resistance effects r s , source resistance (ohms) nf, noise figure (db) 1.0 2.0 5.0 10 20 50 0.2 0.5 0 100 nf, noise figure (db) 0.01 0.02 0.05 r s = optimum r s = source r s = resistance i c = 1.0 ma, r s = 150 w 500 m a, r s = 200 w 100 m a, r s = 2.0 k w 50 m a, r s = 4.0 k w f = 1.0 khz i c = 50 m a 100 m a 500 m a 1.0 ma 4.0 6.0 8.0 10 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k figure 7. capacitances reverse voltage (volts) 3.0 5.0 7.0 10 2.0 0.1 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.2 0.3 0.5 0.7 c cb 20 30 c eb figure 8. currentCgain bandwidth product i c , collector current (ma) 70 100 200 300 50 500 f t , current-gain bandwidth product (mhz) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 v ce = 20 v t j = 25 c figure 9 . on voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 v, voltage (volts) 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v figure 10. t emperature coefficients i c , collector current (ma) -0.5 0 +0.5 coefficient (mv/ c) -1.0 -1.5 -2.5 r  vc for v ce(sat) r  vb for v be 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500 1.0 k 1.0 v -2.0 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500 2012-0 willas electronic corp. dual general purpose transistors MMBT2222ADW1T1
sotC363 2012-0 willas electronic corp. dual general purpose transistors MMBT2222ADW1T1 dimensions in inches and (millimeters) .056(1.40) .047(1.20) .071(1.80) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .004(0.10) .004(0.10)max. .087(2.20) .071(1.80) .054(1.35) .045(1.15) .021(0.55) .030(0.75) .096(2.45)


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